20G10,20G10場效應(yīng)管參數(shù),N+P場效應(yīng)管20G10,20G10代換
20G10場效應(yīng)管,N+PMOS管20G10參數(shù)資料,20G10引腳圖,20G10中文資料規(guī)格書PDF
20G10場效應(yīng)管,N+PMOS管20G10參數(shù)資料,20G10引腳圖,20G10中文資料規(guī)格書PDF
![20G10](http://www.0731law.cn/uploadfile/2024/0220/20240220052015440.jpg)
20G10 PDFN5*6封裝參數(shù):點擊查看![20G10 場效應(yīng)管](http://www.0731law.cn/uploadfile/2021/0809/20210809054154563.jpg)
![20G10 場效應(yīng)管](http://www.0731law.cn/uploadfile/2021/0809/20210809054154563.jpg)
極性:NPN+PNP
NPN極參數(shù)如下:
NPN極參數(shù)如下:
Drain-Source Voltage 漏源電壓Vds:100V
Gate-Source Voltage 柵源電壓Vgs:±20V
Continuous Drain Current 漏極電流Id Tc=25℃:15A
Power Dissipation 功率損耗Pd Ta=25℃:3.5W
Power Dissipation 功率損耗Pd Ta=70℃:W
Static Drain-Source On-Resistance 導(dǎo)通電阻ID=5A,VGS=10V: Typ 65mΩ Max 90mΩ
Static Drain-Source On-Resistance 導(dǎo)通電阻ID=3A,VGS=4.5V:Typ 75mΩ Max 105mΩ
Junction and Storage Temperature Range 溫度范圍:-55~+150℃
PNP極參數(shù)如下:
Drain-Source Voltage 漏源電壓Vds:-100V
Gate-Source Voltage 柵源電壓Vgs:±20V
Continuous Drain Current 漏極電流Id Tc=25℃:-7A
Power Dissipation 功率損耗Pd Ta=25℃:3.5W
Power Dissipation 功率損耗Pd Ta=70℃:W
Static Drain-Source On-Resistance 導(dǎo)通電阻ID=-3A,VGS=-10V: Typ 180mΩ Max 220mΩ
Static Drain-Source On-Resistance 導(dǎo)通電阻ID=-2A,VGS=-4.5V:Typ 210mΩ Max 255mΩ
Junction and Storage Temperature Range 溫度范圍:-55~+150℃
20G10場效應(yīng)管PDFN5*6-8L封裝尺寸:
![20G10 場效應(yīng)管](http://www.0731law.cn/uploadfile/2023/0620/20230620092435598.png)
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